Method and apparatus for gas delivery

ABSTRACT

Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

FIELD

Embodiments of the present invention generally relate to methods andapparatus for gas delivery, and more specifically to the delivery of agas having a low vapor pressure.

BACKGROUND

The remote delivery of low vapor pressure precursors in solid or liquidform to a process chamber requires heating of an ampoule that holds thelow vapor pressure precursor and a long gas line that carries thevaporized low vapor pressure precursor to a process chamber, forexample, to expose a substrate to the precursor. However, theheating/isolating of the long gas line is apt to fail and is oftendifficult to maintain. Moreover, the inventors have observed that remotedelivery of the precursor may also have a slow response believed to bedue to the line volume and the limited flow rate of the precursor fromthe ampoule. The inventors have further observed that such heateddelivery systems also require an upstream mass flow controller (MFC) tocontrol the gas flow rate in order to avoid any condensation problemsinside the MFC. However, positioning the MFC upstream of the ampoulemakes the ampoule susceptible to downstream pressure fluctuation, whichimpacts the delivery accuracy of the precursor.

Thus, the inventors have provided herein improved methods and apparatusfor gas delivery of low vapor pressure precursors.

SUMMARY

Methods and apparatus for gas delivery are disclosed herein. In someembodiments, a gas delivery system includes an ampoule for storing aprecursor in solid or liquid form, a first conduit coupled to theampoule and having a first end coupled to a first gas source to draw avapor of the precursor from the ampoule into the first conduit, a secondconduit coupled to the first conduit at a first junction locateddownstream of the ampoule and having a first end coupled to a second gassource and a second end coupled to a process chamber, and a heat sourceconfigured to heat the ampoule and at least a first portion of the firstconduit from the ampoule to the second conduit and to heat only a secondportion of the second conduit, wherein the second portion of the secondconduit includes the first junction.

In some embodiments, a method of delivering a precursor to a processchamber includes vaporizing a precursor while flowing a first gas toform a concentrated precursor gas mixture in a first heated volume,mixing the concentrated precursor gas mixture with a second gas in asecond heated volume to form a diluted precursor gas mixture, whereinthe partial pressure of the precursor in the diluted precursor gasmixture is less than the vapor pressure of the precursor at about 25degrees Celsius, and flowing the diluted precursor gas mixture to aprocess chamber via a non-heated third volume.

Other and further embodiments of the present invention are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the invention depicted in the appendeddrawings. It is to be noted, however, that the appended drawingsillustrate only typical embodiments of this invention and are thereforenot to be considered limiting of its scope, for the invention may admitto other equally effective embodiments.

FIGS. 1A-B depict a gas delivery system in accordance with someembodiments of the present invention.

FIGS. 2A-B depict alternative apparatus for holding and vaporizing aprecursor in accordance with some embodiments of the present invention.

FIG. 3 depicts a flow chart for a method of delivering a precursor inaccordance with some embodiments of the present invention.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Methods and apparatus for gas delivery are disclosed herein. Methods andapparatus of the present invention advantageously provide vaporizationof low vapor pressure precursors in solid or liquid form at highefficiency and delivery accuracy while reducing energy input costs andimproving delivery rate. For example, embodiments of the inventive gasdelivery system may require heating of only a portion of the conduitscarrying the vaporized precursor. Further, some embodiments of theinventive gas delivery system advantageously allow for flow controldevices, such as mass flow controllers or the like, to be disposeddownstream of the vaporized precursor due to limited possibility ofcondensation of the precursor during delivery. Other and furtherembodiments and advantages of the inventive methods and apparatus arediscussed below.

FIGS. 1A-B depict a gas delivery system 100 in accordance with at leastsome embodiments of the present invention. The gas delivery system 100may include an ampoule 102 for storing a precursor in solid or liquidform. For example, the precursor may be any suitable low vapor pressureprecursor used in processes, such as deposition processes or the like.Exemplarily precursors may include dichlorosilane (DCS), trichlorosilane(TCS), carbon tetrachloride (CCI4), or the like. A first conduit 104 maybe coupled to the ampoule 102. The first conduit 102 may include a firstend 106 coupled to a first gas source 108. The first gas source 108 isdisposed upstream of the ampoule 102 as illustrated in FIG. 1A. Thefirst conduit 104 may be used to draw a vapor of the precursor form theampoule into the first conduit 104.

For example, as illustrated in FIGS. 2A-B, various embodiments of thefirst conduit 104 are possible. For example, when using a liquid form ofthe precursor, the first conduit 104 may be coupled to the ampoule 102such that the first conduit enters the volume of the ampoule 102 and hasan end 202 disposed beneath the surface of the liquid precursor suchthat the first gas may bubble through the precursor to carry vaporand/or small droplets of the precursor within the gas stream. A secondend 204 may be disposed above the liquid precursor to receive aconcentrated precursor gas mixture of the first gas and precursor (end204) as illustrated in FIG. 2A. Alternatively, the first end 202 may bedisposed above the surface of the liquid precursor.

Alternatively, in some embodiments, the first conduit 104 may be coupledto the ampoule 102 such that a sublimed precursor from a solid form ofthe precursor may be drawn through an opening in the ampoule 102 toenter the first conduit 104, as illustrated in FIG. 2B. The sublimedprecursor may mix with the first gas flowing through the first conduit104 to form a concentrated precursor gas mixture from the first gas andthe sublimed precursor.

Returning to FIG. 1A, the flow of the first gas may be controlled by afirst flow controller 110. The first flow controller may be coupled tothe first conduit 104 between the first end 106 of the first conduit 104and the ampoule 102. The first flow controller 110 may be a mass flowcontroller or the like.

A second conduit 112 may be coupled to the first conduit 104 at a firstjunction 114 located downstream of the ampoule 102. As used herein, theterm “junction” may include the intersection of multiple flow paths orsections of conduit, such as by a T-shaped joint or section of conduit,a selective valve such as a valve which allows for the selection ofeither a first or second path, or the like. The second conduit 112 mayhave a first end 116 coupled to a second gas source 118. The secondconduit 112 may have a second end 120 coupled to a process chamber 122.The second gas source 118 may provide a second gas to dilute theconcentrated precursor gas mixture entering the second conduit 112 atthe first junction 114.

In some embodiments, heat may be required over portions of the gasdelivery system 100 to vaporize the precursor and/or to maintain theprecursor in a vaporized state. For example, a heating source 124 may beconfigured to heat the ampoule 102 and at least a first portion 126 ofthe first conduit 104 from the ampoule 102 to the first junction 114 atthe second conduit 112. The heating source 124 may be any suitableheating source, such as heating tape, forced air heated cabinet, heatexchanger, or the like. Further, and optionally, as illustrated in FIG.1A, the heating source 124 may heat the entirety of the first conduit104 up to the first flow controller 110, or the entirety of the firstconduit up to the first gas source 108 (not shown). In some embodiments,the first conduit 104 may be heated up to the first gas source 108. Insuch embodiments, the flow controller should be configured for operationin a heated environment. In some embodiments, a contained heatedenvironment 160 may be provided to facilitate efficient heating of thesystem. For example, in some embodiments, the contained heatedenvironment may include an enclosure to contain or surround the heatedcomponents and portions of the conduit. Such embodiments may facilitatemore uniform heating as well as efficiency. However, use of an enclosuremay cause the system to take longer to stabilize. In some embodiments,the contained heated environment 160 may include a heat exchanger styleheat bath having the portions of the system to be heated disposedtherein. The high thermal mass and thermal arrest provided by the heatbath may help reduce the possibility of catastrophic overheating thatcould lead to decomposition of the precursor.

The heating source 124 may be configured to heat only a second portion128 of the second conduit 112, where the second portion 128 includes thefirst junction 114. The second portion 128 may extend on both sides ofthe first junction 114 as illustrated in FIG. 1A, or may extend onlydownstream of the first junction 114 (not shown). The second portion 128of the second conduit 112 may include the portion where the concentratedprecursor gas mixture received from the first conduit 104 mixes with thesecond gas to form a diluted precursor gas mixture. As discussed above,heating of the concentrated precursor gas mixture may be required toprevent the precursor from condensing out of the concentrated precursorgas mixture. However, once the partial pressure of the precursor isbelow the vapor pressure of the precursor at room temperature, e.g.,about 25 degrees Celsius, then the likelihood of condensation of theprecursor may be limited. For example, by mixing the second gas with theconcentrated precursor gas mixture, such a condition for the partialpressure of the precursor can be achieved in the newly formed dilutedprecursor gas mixture in the second portion 128 of the second conduit112. Accordingly, the partial pressure of the precursor in the dilutedprecursor gas mixture may be less than the vapor pressure of theprecursor at room temperature. Thus, the remainder of the second conduit112, i.e., the portion of the second conduit 112 downstream of thesecond portion 128, may require less heating or may require no heatingbecause condensation of the precursor from the diluted precursor gasmixture may be less likely.

The second conduit 112 may include a second flow controller 130 coupledto the second conduit 112. In some embodiments, for example asillustrated in FIG. 1A, the second flow controller 130 is disposedbetween the first end 116 of the second conduit 112 and the firstjunction 114, or upstream of the first junction 114. For example, in theembodiment illustrated in FIG. 1A, the second flow controller 130provides the second gas at a desired flow rate to mix with theconcentrated precursor gas mixture in the second portion 126 of thesecond conduit 112.

Further, in some embodiments, such as shown in FIG. 1A, the secondconduit 112 may include a pressure regulator 132 disposed in the secondconduit 112 between the first junction 114 and the second end 120 of thesecond conduit 112 to regulate the pressure in the second conduit 112between the pressure regulator 132 and the second flow controller 130,e.g., upstream of the pressure regulator 132. In some embodiments, thepressure in the second conduit 112 using the embodiments shown in FIG.1A may be about 200 Torr. For example, the pressure regulator 132 may benecessary to prevent pressure fluctuations in the second conduit 112that could occur if the second conduit 112 were to be directly exposedto the pressure of the process chamber 122. For example, the pressure inthe process chamber 122 may change frequently due to various processesbeing performed that may introduce process gases in the process chamber122 or require the pressure in the process chamber 122 to be changed.The presence of the pressure regulator 132 may stabilize the pressure inthe second conduit 112 which, for example, may result in consistent andreproducible precursor loading in diluted precursor gas mixture that maybe flowed to the process chamber 122.

Alternatively, the second flow controller 130 and the pressure regulator132 may be configured as illustrated in FIG. 1B. For example, asillustrated in FIG. 1B, the second flow controller 130 may be disposedbetween the first junction 114 and the second end of the second conduit120, or downstream of the first junction 114. For example, in theembodiments illustrated in FIG. 1B, the second flow controller 130 mayprovide a desired flow rate of the diluted precursor gas mixture to theprocess chamber 122. The downstream position of the second flowcontroller 130 as shown in FIG. 1B may be enabled by the methods andapparatus of the present invention. For example, flow controllers, suchas mass flow controllers, are not typically used downstream of precursorgas mixtures because condensation of the precursor gas mixture may occurresulting in inaccuracy of the delivery of the gas mixture to theprocess chamber or damage to the flow controller. However, as discussedherein, the methods and apparatus of the present invention reduce oreliminate the possibility of condensation of the precursor in thediluted precursor gas mixture, thus enabling the downstream positioningof the flow controller without the attendant risk of condensationforming in the flow controller.

As illustrated in FIG. 1B, and also alternative to FIG. 1A, the pressureregulator may be disposed between the first end 116 of the secondconduit 112 and the first junction 114 to regulate the pressure in thesecond conduit 112 between the regulator 132 and the second flowcontroller 130. In some embodiments, the pressure in the second conduit112 may be higher than in the embodiments of FIG. 1A, for example, atleast about 500 Torr. The pressure in the second conduit 112 may behigher in the embodiments of FIG. 1B to provide a sufficient upstreampressure to the second flow controller 130 for accurate operation. Insome embodiments, sufficient upstream pressure in the second conduit 112to operate the second flow controller may be at least about 500 Torr.

In some embodiments, the gas delivery system 100 may include a real-timemonitoring device downstream of the second portion 126 of the secondconduit 112. The real-time monitoring device may be disposed in-line oralong a sample line, for example, such as a third conduit 134 asdiscussed below. The real-time monitoring device may be enabled by themethods and apparatus of the present invention. For example, the lowconcentration of the precursor in the diluted precursor gas mixture andthe absence of heating in the second conduit 112 outside of the secondportion 126 may enable real-time monitoring devices in the gas deliverysystem 100.

The third conduit 134 may be coupled to the second conduit between thefirst junction 114 and the pressure regulator 132 (as shown in FIG. 1A)or between the first junction 114 and the second flow controller 130 ata second junction 136 (as shown in FIG. 1B). The third conduit 134 mayhave a first end 138 coupled to the second junction 136 and a second end140 coupled to a vent 142. The vent 142 may be an exhaust line or thelike, for example, coupled to an abatement system or the like.

The real-time monitoring device may be a concentration sensor 144coupled to the third conduit 134. The concentration sensor may be anysuitable sensor for determining concentration, such as one of thePiezocon® line, available from Lorex Industries, Inc. of Poughkeepsie,N.Y. The concentration sensor 144 may determine the concentration of theprecursor in the diluted precursor gas mixture flowing to the processchamber 122 via the second conduit 112. A flow restrictor 146 may bedisposed in the third conduit 134 between the concentration sensor 144and the vent 142 to, for example, limit flow of the diluted precursorgas mixture to the third conduit 134 at the second junction 136, suchthat a substantial portion of the diluted precursor gas mixture flowstowards the process chamber 122. Since the concentration after mixing isvery low and the sampling line flow is limited, vapor wasted by samplingis limited. Also, since the concentration sensor 144 is off-line, anycondensation problems that do occur will cause little or no problems.Also, any maintenance services performed on the concentration sensor 144will have minimum impact on the main operation of the gas deliverysystem 100.

The gas delivery system 100 may include a third junction 148 proximatethe second end 120 of the second conduit 112. The fourth conduit 149 hasa first end coupled to the third junction 148 and a second end coupledto a vent 150. In some embodiments, the vent 142 and the vent 150 may bethe same exhaust line, or may coupled to the same exhaust line.Similarly, the vent 150 may be coupled to an abatement system or thelike. The third junction 148 may include a valve (not shown) forselecting between flow to the process chamber 122 and flow to the fourthconduit 149 (and vent 150). For example, this type of selective flow maybe used during processing in the process chamber 122 such that theprecursor is continuously vaporized over the time period of processingin the process chamber 122 to limit variations, such as in concentrationin the diluted precursor gas mixture or the like that may otherwiseresult from starting and stopping the flow of the first gas or the like.

A controller 152 may be coupled to the process chamber 122 and/orsupport systems, such as the gas delivery system 100, directly (as shownin FIG. 1A) or, alternatively, via computers (or controllers) associatedwith the process chamber and/or the support systems. The controller 152may be one of any form of general-purpose computer processor that can beused in an industrial setting for controlling various chambers andsub-processors. The memory, or computer-readable medium, 154 of the CPU156 may be one or more of readily available memory such as random accessmemory (RAM), read only memory (ROM), floppy disk, hard disk, or anyother form of digital storage, local or remote. The memory 154 may storeroutines to be performed by the process chamber 122 and/or varioussupport systems, such as the gas delivery system 100. Exemplary routinesmay include a method 300 for delivering the precursor to the processchamber 122 as described below. Support circuits 158 are coupled to theCPU 156 for supporting the processor in a conventional manner. Thesecircuits include cache, power supplies, clock circuits, input/outputcircuitry and subsystems, and the like.

FIG. 3 depicts a flow chart for the method 300 of delivering a precursorto a process chamber, such as the process chamber 122. The method 300 isdescribed below with respect to FIGS. 1A-B and 2A-B. The method 300begins at 302 by vaporizing the precursor while flowing the first gas toform the concentrated precursor gas mixture in a first heating volume.The first heating volume may include the first conduit 104 and theampoule 102. The first gas, as discussed above, may be provided by thefirst gas source 108. The first gas may include a carrier gas, such asan inert gas. In some embodiments, the first gas may be one or more ofnitrogen (N₂), hydrogen (H₂), argon (Ar), helium (He), or the like. Theflow of the first gas may be controlled by the first flow controller110. As discussed below, the flow of the first gas may be adjusted inresponse to sampling the concentration of the precursor in the dilutedprecursor gas mixture formed downstream of the concentrated precursorgas mixture formed in the first heating volume at 302.

The precursor may be vaporized by alternative methods. For example, asdiscussed above, the precursor may be in liquid form. Accordingly, insome embodiments, such as illustrated in FIG. 2A, the first gas may beflowed into a portion (e.g., the ampoule 102) of the first heated volumeholding the precursor. The first gas may be bubbled into the liquidprecursor to form the concentrated precursor gas mixture. Alternatively,as discussed above, the precursor may be in solid form. Accordingly, insome embodiments, such as illustrated in FIG. 2B, the solid precursormay be sublimed and enter the first conduit 104 where the sublimedprecursor mixes with the flowing first gas to form the concentratedprecursor gas mixture.

At 304, the concentrated precursor gas mixture may be mixed with thesecond gas in a second heated volume (e.g., the second portion 126) toform the diluted precursor gas mixture. As discussed above, the secondgas may be provided by the second gas source 118. The second gas may bethe same as the first gas. In some embodiments, the second gas may beone or more of nitrogen (N₂), hydrogen (H₂), argon (Ar), helium (He), orthe like. The second gas may be different from the first one. However,providing a different second gas introduces more complexity, makingdownstream concentration monitoring more difficult since it will be amixture of three components rather than a mixture of two components.

The second gas may be flowed at a higher flow rate that the first gas.For example, the flow rate of the second gas may be about 5 or moretimes the flow rate of the first gas. The higher flow rate of the secondgas may be enabled by the present invention. Typically, a single conduitis provided to an ampoule for delivering the precursor, thereby limitingthe maximum flow rate of the carrier gas due to the risk of splashing orentraining particles in the gas stream. To the contrary, however, thegas delivery system 100 of the present invention provides a second gasalong the second conduit 112 which does not flow through the ampoule102. Accordingly, events that may necessitate reducing a flow rate, suchas splashing of the precursor in the ampoule 102 or the like, may beavoided in the gas delivery system 100. Thus, the flow rate of thesecond gas in the second conduit 112 (and thus the total flow rate ofthe gas delivery system) may be higher than in conventional gas deliverysystems. The higher flow rate of the second gas may advantageouslyimprove response time in the gas delivery system by up to about 100times over a conventional gas delivery system.

At 306, the diluted precursor gas mixture may be flowed to the processchamber 122 via a non-heated third volume, e.g., the remaining portionof the second conduit 112, downstream of the second portion 126. Asdiscussed above, the diluted precursor gas mixture formed in the secondheated volume may have a partial pressure of the precursor that is lessthan the vapor pressure of the precursor at room temperature, e.g.,about 25 degrees Celsius. Accordingly, the diluted precursor gas mixturemay require no additional heating in the non-heated third volume becausecondensation of the precursor is less likely.

The pressure of the diluted precursor gas mixture may be regulated inthe second heated volume and the non-heated third volume. For example,the pressure of the diluted precursor gas mixture may be regulateddownstream of the second flow controller 130 used to controller the flowof the second gas from the second gas source 118 as illustrated in FIG.1A. Alternatively, the pressure of the diluted precursor gas mixture maybe regulated upstream of the second flow controller 130, where thesecond flow controller may be used to control the flow of the dilutedprecursor gas mixture to the process chamber 122 and downstream of thesecond gas source 118 use to provide the second gas to the second volumeas illustrated in FIG. 1B.

The diluted precursor gas mixture may be flowed to the process chamber122 selectively. For example, the diluted precursor gas mixture may beselectively flowed to the process chamber 122 or to the vent 150. Forexample, the flow to the process chamber 122 and the vent 150 may bealternated according to the process being performed in the processchamber 122, such as a deposition process, a cyclical depositionprocess, or the like.

In some embodiments, the method 300 may include sampling a portion ofthe diluted precursor gas mixture from the third volume, for example,using the sample line (e.g., the third conduit 134). Sampling of theportion of the diluted precursor gas mixture may occur at a first flowrate that is slower than a second flow rate of a second portion of thediluted precursor gas mixture that is flowing to the process chamber122. For example, the flow restrictor 146 may facilitate the disparitybetween the first and second flow rates to ensure that a substantialportion of the diluted precursor gas mixture flows to the processchamber 122. A concentration of the precursor in the diluted precursorgas mixture may be determined, for example, using the concentrationsensor 144 as discussed above.

If the determined concentration of the precursor in the dilutedprecursor gas mixture is not within a desired tolerance level,parameters of the gas delivery system that may control the concentrationof the precursor may be adjusted. For example, at least one of heatingtemperature of the first or second heated volumes, flow rate of thefirst gas, flow rate of the second gas, or pressure in the second heatedvolume and third non-heated volume may be adjusted until the desiredtolerance level is reached. In some embodiments, the first gas flow maybe increased such that the amount of precursor in the final mixture willincrease. Control of the flow rate of the first gas or the second gasmay provide a faster response time than controlling the heatingtemperature. For example, the maximum flow possible will be limited bythe type of precursor and the temperature. There are no specialrequirements for the flow rate of the second gas other than providingenough dilution. For gas delivery over long lines, a total flow rate ashigh as 5 slm might be desirable. However, the specific temperatures andflow rates will depend upon the specific configuration of the system andthe precursors being used.

Thus, methods and apparatus for gas delivery have been disclosed herein.Methods and apparatus of the present invention advantageously providesvaporization of a low vapor pressure precursor in solid or liquid format high efficiency and delivery accuracy while reducing energy inputcosts and improving delivery rate.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof.

1-7. (canceled)
 8. A method of delivering a precursor to a processchamber, comprising: vaporizing a precursor while flowing a first gas toform a concentrated precursor gas mixture in a first heated volume;mixing the concentrated precursor gas mixture with a second gas in asecond heated volume to form a diluted precursor gas mixture, whereinthe partial pressure of the precursor in the diluted precursor gasmixture is less than the vapor pressure of the precursor at about 25degrees Celsius; and flowing the diluted precursor gas mixture to aprocess chamber via a non-heated third volume.
 9. The method of claim 8,further comprising: regulating the pressure of the diluted precursor gasmixture in the second heated volume and the third volume downstream of asecond flow controller used to control the flow of the second gas from asecond gas source.
 10. The method of claim 8, further comprising:regulating the pressure of the diluted precursor gas mixture in thesecond heated volume and the third volume upstream of a second flowcontroller used to control the flow of the diluted precursor gas mixtureto the process chamber and downstream of a second gas source used toprovide the second gas to the second volume.
 11. The method of claim 8,further comprising: controlling the flow of the first gas upstream ofthe first heated volume using a first flow controller disposed between afirst gas source which provides the first gas and the first heatedvolume.
 12. The method of claim 11, wherein vaporizing the precursorfurther comprises: flowing the first gas into a portion of the firstheated volume holding the precursor; and bubbling the first gas into theliquid state of the precursor to form the concentrated precursor gasmixture.
 13. The method of claim 11, wherein vaporizing the precursorfurther comprises: subliming the precursor; and mixing the sublimedprecursor with the flowing first gas to form the concentrated precursorgas mixture.
 14. The method of claim 8, wherein flowing the dilutedprecursor gas mixture to the process chamber further comprises:selectively flowing the diluted precursor gas mixture to the processchamber or to a vent during a chamber process.
 15. The method of claim8, further comprising: sampling a portion of the diluted precursor gasmixture from the third volume; and determining a concentration of theprecursor in the diluted precursor gas mixture.
 16. The method of claim15, wherein sampling the portion of the diluted precursor gas mixturefurther comprises: sampling the portion of the diluted precursor gasmixture at a first flow rate that is slower than a second flow rate of asecond portion of the diluted precursor gas mixture that is flowing tothe process chamber.
 17. The method of claim 15, further comprising:adjusting at least one of heating temperature of the first or secondheated volumes, flow rate of the first gas, or flow rate of the secondgas if the determined concentration of the precursor in the dilutedprecursor gas mixture is not within a desired tolerance level.
 18. Themethod of claim 8, wherein mixing the concentrated precursor gas mixturefurther comprises: flowing the second gas at a flow rate of about fiveor more times the flow rate of the first gas.
 19. The method of claim14, wherein selectively flowing the diluted precursor gas mixture to theprocess chamber or to the vent during the chamber process furthercomprises: maintaining a continuous flow of the diluted precursor gasmixture while alternating the flow of the diluted precursor gas mixturebetween the process chamber and the vent.
 20. The method of claim 17,further comprising adjusting the pressure in the second heated volumeand the non-heated third volume if the determined concentration of theprecursor in the diluted precursor gas mixture is not within a desiredtolerance level.
 21. A method of delivering a precursor to a processchamber, comprising: vaporizing a precursor or sublimating a solidprecursor disposed within an ampoule while flowing a first gas from afirst gas source through a first flow controller to form a concentratedprecursor gas mixture in a first heated volume within the ampoule;mixing the concentrated precursor gas mixture with a second gas from asecond gas source connected to a second flow controller to form adiluted precursor gas mixture in a second heated volume outside of theampoule, wherein the partial pressure of the precursor in the dilutedprecursor has mixture is less than the vapor pressure of the precursorat about 25 degrees Celsius; and flowing the diluted precursor gasmixture from the second heated volume to a process chamber via anon-heated third volume.
 22. The method of claim 21, further comprising:determining the concentration of the precursor in the diluted precursorgas mixture using a concentration sensor coupled to the non-heated thirdvolume.
 23. The method of claim 22, further comprising: restricting theflow of the diluted precursor gas mixture to the third conduit with aflow restrictor disposed between the concentration sensor and a vent toselectively direct the diluted precursor gas mixture to an exhaustsystem.